E-ISSN 2705-3954 | ISSN 0794-4756
 

Original Research 
NJE. 2025; 32(1): 121-131


Design and Simulation of a 2.5 GHz High-efficiency Class B Power Amplifier Using GaN Transistor for Mobile Communication Applications

Abdulrazaq Abdulaziz, Abdulmalik Shehu Yaro, Ashraf Adam Ahmad, Fahad Abdu Jibrin, Abdulmumini Zubairu Loko, Murtala Hassan Dankulu.


Abstract
ABSTRACT
This paper presents the design and simulation of a 2.5 GHz Class B single-stage RF power amplifier (PA) using a GaN High Electron Mobility Transistor (HEMT). The proposed PA, optimized for the 2.1–2.9 GHz frequency range, leverages GaN HEMT’s high power density, high voltage operation, and low parasitic capacitance to achieve a greater performance. The design delivers 43 dBm of output power, over 50% power-added efficiency (PAE), and 21 dB power gain at the 1 dB gain compression point. Designed with a 48V drain bias voltage and simulated using Advanced Design System (ADS), this work demonstrates a high-performance, efficient PA suitable for wideband RF applications.

Key words: Keywords: RF Power Amplifier (PA), Gallium Nitride (GaN), Class B, Input Matching Network (IMN), Output Matching Network (OMN).


 
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How to Cite this Article
Pubmed Style

Abdulaziz A, Yaro AS, Ahmad AA, Jibrin FA, Loko AZ, Dankulu MH. Design and Simulation of a 2.5 GHz High-efficiency Class B Power Amplifier Using GaN Transistor for Mobile Communication Applications. NJE. 2025; 32(1): 121-131.


Web Style

Abdulaziz A, Yaro AS, Ahmad AA, Jibrin FA, Loko AZ, Dankulu MH. Design and Simulation of a 2.5 GHz High-efficiency Class B Power Amplifier Using GaN Transistor for Mobile Communication Applications. https://www.njeabu.com.ng/?mno=242951 [Access: May 11, 2025].


AMA (American Medical Association) Style

Abdulaziz A, Yaro AS, Ahmad AA, Jibrin FA, Loko AZ, Dankulu MH. Design and Simulation of a 2.5 GHz High-efficiency Class B Power Amplifier Using GaN Transistor for Mobile Communication Applications. NJE. 2025; 32(1): 121-131.



Vancouver/ICMJE Style

Abdulaziz A, Yaro AS, Ahmad AA, Jibrin FA, Loko AZ, Dankulu MH. Design and Simulation of a 2.5 GHz High-efficiency Class B Power Amplifier Using GaN Transistor for Mobile Communication Applications. NJE. (2025), [cited May 11, 2025]; 32(1): 121-131.



Harvard Style

Abdulaziz, A., Yaro, . A. S., Ahmad, . A. A., Jibrin, . F. A., Loko, . A. Z. & Dankulu, . M. H. (2025) Design and Simulation of a 2.5 GHz High-efficiency Class B Power Amplifier Using GaN Transistor for Mobile Communication Applications. NJE, 32 (1), 121-131.



Turabian Style

Abdulaziz, Abdulrazaq, Abdulmalik Shehu Yaro, Ashraf Adam Ahmad, Fahad Abdu Jibrin, Abdulmumini Zubairu Loko, and Murtala Hassan Dankulu. 2025. Design and Simulation of a 2.5 GHz High-efficiency Class B Power Amplifier Using GaN Transistor for Mobile Communication Applications. Nigerian Journal of Engineering, 32 (1), 121-131.



Chicago Style

Abdulaziz, Abdulrazaq, Abdulmalik Shehu Yaro, Ashraf Adam Ahmad, Fahad Abdu Jibrin, Abdulmumini Zubairu Loko, and Murtala Hassan Dankulu. "Design and Simulation of a 2.5 GHz High-efficiency Class B Power Amplifier Using GaN Transistor for Mobile Communication Applications." Nigerian Journal of Engineering 32 (2025), 121-131.



MLA (The Modern Language Association) Style

Abdulaziz, Abdulrazaq, Abdulmalik Shehu Yaro, Ashraf Adam Ahmad, Fahad Abdu Jibrin, Abdulmumini Zubairu Loko, and Murtala Hassan Dankulu. "Design and Simulation of a 2.5 GHz High-efficiency Class B Power Amplifier Using GaN Transistor for Mobile Communication Applications." Nigerian Journal of Engineering 32.1 (2025), 121-131. Print.



APA (American Psychological Association) Style

Abdulaziz, A., Yaro, . A. S., Ahmad, . A. A., Jibrin, . F. A., Loko, . A. Z. & Dankulu, . M. H. (2025) Design and Simulation of a 2.5 GHz High-efficiency Class B Power Amplifier Using GaN Transistor for Mobile Communication Applications. Nigerian Journal of Engineering, 32 (1), 121-131.